UPA1890GR-9JG-E1-A
MOSFET N/P-CH 30V 6A/5A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1890GR-9JG-E1-A is a MOSFET array featuring N and P-channel configurations. This electronic component is rated for a Drain to Source Voltage (Vdss) of 30V and supports continuous drain currents of 6A for the N-channel and 5A for the P-channel. The device utilizes a logic level gate and has a maximum power dissipation of 2W. Key electrical parameters include a maximum gate charge (Qg) of 14nC at 10V and a maximum input capacitance (Ciss) of 748pF at 10V. The on-resistance (Rds On) is specified at 27mOhm maximum for a drain current of 3A and gate-source voltage of 10V. This component is supplied in an 8-SOIC package, also known as 8-PSOP, and is available on tape and reel. This MOSFET array is suitable for applications in power management and switching circuits across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 748pF @ 10V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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