Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

UPA1874BGR-9JG-E1-A

Banner
productimage

UPA1874BGR-9JG-E1-A

MOSFET 2N-CH 30V 8A 8TSSOP

Manufacturer: Renesas Electronics Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Renesas Electronics Corporation's UPA1874BGR-9JG-E1-A is a dual N-channel MOSFET array optimized for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8A per channel at 25°C. The device boasts a low on-resistance (Rds On) of 14mOhm at 4A and 4.5V Vgs, ensuring efficient power handling. With a logic level gate, it is compatible with lower voltage control signals. The UPA1874BGR-9JG-E1-A is housed in a compact 8-TSSOP package, suitable for surface mounting, and dissipates up to 2W of power. Key electrical characteristics include a maximum gate charge (Qg) of 10nC at 4V and an input capacitance (Ciss) of 930pF at 10V. This MOSFET array finds application in automotive and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Input Capacitance (Ciss) (Max) @ Vds930pF @ 10V
Rds On (Max) @ Id, Vgs14mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs10nC @ 4V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device Package8-TSSOP

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NP30N06QDK-E1-AY

MOSFET 2N-CH 60V 30A 8HSON

product image
UPA2350T1G-E4-A

MOSFET 2N-CH 20V 6A 4FLIPCHIP

product image
UPA603T-T2-A

MOSFET 2P-CH 50V 0.1A SC59