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UPA1872BGR-9JG-E1-A

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UPA1872BGR-9JG-E1-A

MOSFET 2N-CH 20V 10A 8TSSOP

Manufacturer: Renesas Electronics Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Renesas Electronics Corporation UPA1872BGR-9JG-E1-A is a dual N-channel MOSFET array designed for surface mount applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. The UPA1872BGR-9JG-E1-A offers a low on-resistance of 13mOhm at 5A and 4.5V Vgs, with a logic level gate input. Key parameters include a maximum power dissipation of 2W and a gate charge (Qg) of 10nC at 4V. The input capacitance (Ciss) is rated at a maximum of 945pF at 10V. Packaged in an 8-TSSOP, this device is suitable for use in automotive and industrial control systems.

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A
Input Capacitance (Ciss) (Max) @ Vds945pF @ 10V
Rds On (Max) @ Id, Vgs13mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs10nC @ 4V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device Package8-TSSOP

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