UPA1857GR-9JG-E1-A
MOSFET 2N-CH 60V 3.8A 8TSSOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1857GR-9JG-E1-A is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3.8A at 25°C. The MOSFET array offers a low Rds On of 67mOhm at 2A, 10V, and a logic-level gate feature. With a maximum power dissipation of 1.7W, it is packaged in an 8-TSSOP format and supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 12nC (max) at 10V and Input Capacitance (Ciss) of 580pF (max) at 10V. The threshold voltage (Vgs(th)) is 2.5V (max) at 1mA. This component is utilized in power management and motor control applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 10V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
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