UPA1793G-E1-AT
MOSFET N/P-CH 20V 3A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation's UPA1793G-E1-AT is a MOSFET array featuring both N-channel and P-channel configurations within an 8-PSOP package. This device offers a continuous drain current of 3A at 25°C and a drain-to-source voltage of 20V. Key electrical characteristics include a maximum on-resistance of 69mOhm at 1.5A and 4.5V gate-source voltage, and a maximum gate charge of 3.1nC at 4V. The input capacitance (Ciss) is specified at a maximum of 160pF at 10V drain-source voltage. This surface mount component supports logic level gate drive and dissipates a maximum power of 2W. It is commonly utilized in power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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