UPA1763G-E1-AT
MOSFET 2N-CH 60V 4.5A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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The Renesas Electronics Corporation UPA1763G-E1-AT is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a continuous drain current capability of 4.5A and a drain-to-source voltage rating of 60V. Engineered with a logic level gate, it ensures compatibility with lower voltage control signals. The device offers a low on-resistance of 57mOhm at 2.3A and 4.5V Vgs, minimizing conduction losses. With a maximum power dissipation of 2W and a surface mount 8-PSOP package, the UPA1763G-E1-AT is suitable for high-density board designs. Key parameters include a gate charge of 20nC (max) at 10V and input capacitance of 870pF (max) at 10V. This MOSFET array finds application in power management circuits, motor control, and general-purpose switching within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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