UPA1759G-E1-AT
MOSFET 2N-CH 60V 5A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1759G-E1-AT is a dual N-channel MOSFET array designed for demanding applications. This 8-PSOP package device features a 60V drain-source voltage and a continuous drain current capability of 5A. Optimized for efficiency, it offers a low on-resistance of 150mOhm at 2.5A and 10V Vgs. The UPA1759G-E1-AT is built with MOSFET technology and includes a logic-level gate for wider compatibility. Key parameters include a gate charge (Qg) of 8nC maximum at 10V and input capacitance (Ciss) of 190pF maximum at 10V. This component is suitable for power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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