RJM0603JSC-00#13
MOSFET 3N/3P-CH 60V 20A 20HSOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation RJM0603JSC-00-13 is a MOSFET array featuring a 3 N-channel and 3 P-channel configuration, suitable for 3-phase bridge applications. This device offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 54W. The MOSFETs incorporate logic-level gate drive capabilities, requiring 4.5V for operation. Key electrical characteristics include a typical on-resistance (Rds On) of 20mOhm at 10A and 10V. Input capacitance (Ciss) is specified at 2600pF maximum at 10V, and gate charge (Qg) is 43nC maximum at 10V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. This component is designed for surface mounting within a 20-HSOP package, featuring an exposed pad. Rated for automotive applications, it meets AEC-Q101 qualification standards and operates across an extended temperature range of 175°C. This component is utilized in automotive power management and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging:Download Free CAD Model:
Technical Details:
| Packaging | |
| Package / Case | 20-SOIC (0.433"", 11.00mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 3 N and 3 P-Channel (3-Phase Bridge) |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 54W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 20-HSOP |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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