RJK03P9DPA-00#J5A
MOSFET 2N-CH 30V 20A/50A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation RJK03P9DPA-00-J5A is a dual N-channel MOSFET array designed for demanding power applications. This component features a 30V drain-source voltage (Vdss) and offers continuous drain current ratings of 20A and 50A at 25°C. The RJK03P9DPA-00-J5A supports logic-level gate drive, with a specified gate charge (Qg) of 7.7nC at 4.5V and an input capacitance (Ciss) of 1660pF at 10V. Its low on-resistance (Rds On) is 7mOhm at 10A and 10V. The device is packaged in an 8-WPAK (8-WFDFN Exposed Pad) for surface mounting and can operate at junction temperatures up to 150°C. Maximum power dissipation is listed as 15W and 35W. This MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 15W, 35W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A, 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
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