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RJK03P7DPA-00#J5A

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RJK03P7DPA-00#J5A

MOSFET 2N-CH 30V 15A/30A 8WPAK

Manufacturer: Renesas Electronics Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Renesas Electronics Corporation RJK03P7DPA-00-J5A, a dual N-channel MOSFET array, features a 30V drain-source voltage rating and continuous drain current capabilities of 15A and 30A respectively. Designed for surface mount applications within an 8-WPAK (8-WFDFN Exposed Pad) package, this component offers a low Rds On of 9.4mOhm at 7.5A and 10V Vgs. Key specifications include a 7.1nC maximum gate charge at 4.5V and 1190pF maximum input capacitance at 10V Vds. This device operates at a maximum junction temperature of 150°C and is suitable for high-density power management solutions across automotive and industrial sectors. It supports logic-level gate drive with a 4.5V gate drive requirement.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-WFDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max10W, 20W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C15A, 30A
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 10V
Rds On (Max) @ Id, Vgs9.4mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 4.5V
FET FeatureLogic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id-
Supplier Device Package8-WPAK

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