KGF20N05D
MOSFET 2N-CH 5.5V 20A 20WLCSPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation's KGF20N05D is a dual N-channel MOSFET array packaged in a 20-WLCSP (2.48x1.17) for surface mounting. This component features a Drain-Source Voltage (Vdss) of 5.5V and a continuous Drain Current (Id) of 20A (Tj) with a maximum power dissipation of 2.5W (Ta). The low on-resistance is specified at 1.6mOhm at 10A, 4.5V, and the gate charge (Qg) is 6.7nC at 4.5V. Input capacitance (Ciss) is a maximum of 865pF at 5V, and the threshold voltage (Vgs(th)) is 900mV at 250µA. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET array is suitable for applications in consumer electronics and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-UFLGA, CSP |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Source |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 5.5V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 5V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 10A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 20-WLCSP (2.48x1.17) |
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