HAT2218R-EL-E
MOSFET 2N-CH 30V 7.5A/8A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation HAT2218R-EL-E is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-to-source voltage (Vdss) and offers continuous drain currents of 7.5A and 8A per channel. The MOSFET array is characterized by its logic-level gate operation, requiring only 4.5V for drive. Key electrical parameters include a maximum on-resistance (Rds On) of 24mOhm at 3.75A and 10V, and a gate charge (Qg) of 4.6nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 630pF at 10V. The device dissipates a maximum power of 1.5W and operates within an extended temperature range up to 150°C (TJ). It is supplied in an 8-SOP (8-SOIC) surface-mount package, suitable for high-density board layouts. Applications include power management in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A, 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
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