HAT2210RWS-E
MOSFET 2N-CH 30V 7.5A/8A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation's HAT2210RWS-E is a dual N-channel MOSFET array featuring a 30V drain-to-source voltage (Vdss) and continuous drain currents of 7.5A and 8A at 25°C (Ta). This component is designed for logic level gate operation requiring a 4.5V drive. Key electrical specifications include a maximum power dissipation of 1.5W (Ta), on-resistance (Rds On) of 24mOhm at 3.75A/10V and 22mOhm at 4A/10V, and gate charge (Qg) of 4.6nC and 11nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 630pF and 1330pF at 10V. The device operates within a temperature range of -55°C to 150°C. Packaged in an 8-SOP (8-SOIC) surface mount configuration, the HAT2210RWS-E is supplied on tape and reel. This MOSFET array is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual), Schottky |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V, 1330pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V, 11nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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