HAT2038RWS-E
MOSFET 2N-CH 60V 5A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation HAT2038RWS-E is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C, with a low on-resistance of 58mOhm at 3A and 10V. The device operates with a logic-level gate requiring only 4V for drive. Key parameters include an input capacitance (Ciss) of 520pF at 10V and a gate threshold voltage (Vgs(th)) of 2.2V at 1mA. The HAT2038RWS-E is packaged in an 8-SOP surface-mount configuration, suitable for high-density circuit designs, and is supplied on a tape and reel. It is rated for a maximum power dissipation of 3W and an operating temperature of up to 150°C. This component is commonly utilized in power management and control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 8-SOP |
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