GWS9294
MOSFET 2N-CH 20V 10.1A 4QFNManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Renesas Electronics Corporation GWS9294 is a dual N-channel MOSFET array designed for demanding applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10.1A at 25°C (Ta). With a low on-resistance of 13mOhm at 6.5A and 4.5V, it offers efficient power handling with a maximum power dissipation of 3.6W. The GWS9294 utilizes a 4-QFN (2x2) surface mount package, ideal for compact designs. Key electrical parameters include a gate charge (Qg) of 11nC (max) at 4V and input capacitance (Ciss) of 900pF (max) at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. This MOSFET array is suitable for use in automotive, industrial, and consumer electronics sectors where reliable power switching is critical. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-VDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 4-QFN (2x2) |
Request a Quote
Clients Also Buy
NP30N06QDK-E1-AY
MOSFET 2N-CH 60V 30A 8HSON
UPA1950TE-T1-AT
MOSFET 2P-CH 12V 2.5A SC95
FS30ASJ-06F#B00
MOSFET N-CH
