GWS4621L
MOSFET 2N-CH 20V 10.1A 4WLCSPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation GWS4621L, a dual N-channel MOSFET array, offers a 20V drain-to-source breakdown voltage. This component features a continuous drain current (Id) of 10.1A at 25°C, with a maximum power dissipation of 3.6W. The Rds On is specified at 9.8mOhm at 3A and 4.5V. Designed with a common drain configuration, the GWS4621L utilizes MOSFET technology and is housed in a compact 4-WLCSP (1.82x1.82) package for surface mounting. Key electrical characteristics include a gate charge (Qg) of 11nC maximum at 4V and input capacitance (Ciss) of 1125pF maximum at 10V. The operating temperature range is -55°C to 150°C. This device is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-XFLGA, CSP |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1125pF @ 10V |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 4-WLCSP (1.82x1.82) |
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