RJS6005WDPK-00#T0
DIODE ARR SIC SCHOTT 600V TO3PManufacturer: Renesas Electronics Corporation
Categories: Diode Arrays
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Renesas Electronics Corporation RJS6005WDPK-00-T0 is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-3P-3 (SC-65-3) package, offers a maximum DC reverse voltage of 600 V and an average rectified current (Io) of 15 A per diode. It exhibits a forward voltage (Vf) of 1.8 V at 15 A and a reverse leakage current of 10 µA at 600 V. The diode array boasts a fast recovery time of 15 ns, categorizing it within the fast recovery speed class (<= 500ns, > 200mA). Operating temperature range is from -55°C to 155°C. This component is suitable for applications in power supply, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 15A (DC) |
| Supplier Device Package | TO-3P |
| Operating Temperature - Junction | -55°C ~ 155°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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