UPA2003C-A
NPN SILICON EPITAXIAL DARLINGTONManufacturer: Renesas Electronics Corporation
Categories: Bipolar Transistor Arrays
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Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 900mW Through Hole 16-DIP
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 16-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 7 NPN Darlington |
| Operating Temperature | -30°C ~ 75°C |
| Power - Max | 900mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 16-DIP |
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