CA3083Z
TRANS 5NPN 15V 0.1A 16DIPManufacturer: Renesas Electronics Corporation
Categories: Bipolar Transistor Arrays
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Renesas Electronics Corporation CA3083Z is a 5-NPN transistor array housed in a 16-PDIP package. This bipolar junction transistor (BJT) array offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 100mA. With a transition frequency of 450MHz and a maximum power dissipation of 500mW, it is suitable for applications requiring multiple switching or amplification elements. The device features a minimum DC current gain (hFE) of 40 at 50mA and 3V, and a Vce saturation of 700mV at 5mA/50mA. Operating temperature range extends to 150°C (TJ). This component finds utility in industrial control, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 5 NPN |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 3V |
| Frequency - Transition | 450MHz |
| Supplier Device Package | 16-PDIP |