UPA901TU-T3-A
RF SMALL SIGNAL TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation's UPA901TU-T3-A is a dual NPN bipolar RF bipolar transistor designed for surface mount applications. This component offers two independent NPN transistors within a single 8-MINIMOLD package, featuring a collector-emitter breakdown voltage of 4.5V. It supports collector currents of up to 75mA for one transistor and 250mA for the other, with a maximum power dissipation of 410mW. The device exhibits a minimum DC current gain (hFE) of 80 at specified test conditions. Applications for this transistor include various RF signal processing and amplification stages within the telecommunications and industrial electronics sectors. The UPA901TU-T3-A is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Gain | - |
| Power - Max | 410mW |
| Current - Collector (Ic) (Max) | 75mA, 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 6mA, 3V / 80 @ 20mA, 3V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-MINIMOLD |
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