UPA802T-T1-A
RF SMALL SIGNAL TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation UPA802T-T1-A is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a SOT-363 package, offers a collector current of up to 65mA and a collector-emitter breakdown voltage of 10V. With a transition frequency of 7GHz and a typical gain of 12dB, it is well-suited for RF amplification stages. The device exhibits a minimum DC current gain of 70 at 7mA and 3V, and a low noise figure of 1.4dB at 1GHz. Its maximum power dissipation is 200mW, and it operates across an extended temperature range up to 150°C. This transistor finds application in wireless communication systems and other demanding RF circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SOT-363 |
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