NESG2101M05-T1-A
NESG2101 - NPN SIGE RF TRANSISTOManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation's NESG2101M05-T1-A is an NPN SiGe RF transistor designed for high-frequency applications. This component features a 5V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a minimum DC current gain (hFE) of 130 at 15mA and 2V. Operating up to 17GHz, it delivers a gain range of 11dB to 19dB and exhibits a typical noise figure between 0.6dB and 1.2dB across the 1GHz to 2GHz frequency spectrum. The NESG2101M05-T1-A is housed in a compact SOT-343F (M05) surface mount package, capable of handling up to 500mW of power. This device is suitable for use in wireless communication systems and other demanding RF front-end circuitry.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | 11dB ~ 19dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
| Frequency - Transition | 17GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz |
| Supplier Device Package | M05 |
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