NESG2021M16-T3-A
RF SMALL SIGNAL TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation's NESG2021M16-T3-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component features a 5V collector-emitter breakdown voltage and a maximum collector current of 35mA. It offers a transition frequency of 25GHz, enabling operation in demanding RF circuits. The transistor exhibits a minimum DC current gain (hFE) of 130 at 5mA and 2V. Typical noise figures range from 0.9dB to 1.3dB across the 2GHz to 5.2GHz spectrum, with a power gain between 10dB and 18dB. The NESG2021M16-T3-A is supplied in the M16, 1208 package, suitable for automated assembly processes. Its specifications make it a suitable choice for applications in wireless communication infrastructure, satellite systems, and defense electronics. The maximum power dissipation is rated at 175mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | 10dB ~ 18dB |
| Power - Max | 175mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 5mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz |
| Supplier Device Package | M16, 1208 |
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