HSG1002VE-TL-E
RF 0.035A C BAND GERMANIUM NPNManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Renesas Electronics Corporation HSG1002VE-TL-E is a high-performance NPN bipolar RF transistor designed for demanding applications. This device operates with a collector-emitter breakdown voltage of 3.5V and a maximum collector current of 35mA. Featuring a transition frequency of 38GHz, it delivers a gain ranging from 8dB to 19.5dB across its operating spectrum. The noise figure is exceptionally low, typically between 0.7dB and 1.8dB at frequencies from 1.8GHz to 5.8GHz. Supplied in a 4-MFPAK surface mount package, this component is suitable for automated assembly. The HSG1002VE-TL-E finds utility in wireless communication infrastructure, satellite systems, and high-frequency test equipment.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Gull Wing |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | 8dB ~ 19.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 2V |
| Frequency - Transition | 38GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
| Supplier Device Package | 4-MFPAK |
Request a Quote
Clients Also Buy
HFA3096BZ96
RF TRANS 12/15V 5.5GHZ 16SOIC
HFA3127BZ96
RF TRANS 5 NPN 12V 8GHZ 16SOIC
2SC5998YC-TL-E
SMALL SIGNAL BIPOLAR TRANSTR NPN
