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HFA3135IH96

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HFA3135IH96

RF TRANS 2 PNP 9V 7GHZ SOT23-6

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation HFA3135IH96 is a dual PNP bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a 6-SOT (SOT-23-6), operates with a collector-emitter breakdown voltage of 9V and a maximum collector current of 26mA. It exhibits a transition frequency of 7GHz and a typical DC current gain (hFE) of 15 at 10mA and 2V. The noise figure is rated at 5.2dB at 900MHz. This device is suitable for operation in demanding environments, with a maximum junction temperature of 150°C. The HFA3135IH96 is commonly utilized in wireless infrastructure, satellite communications, and test and measurement equipment. It is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Gain-
Power - Max-
Current - Collector (Ic) (Max)26mA
Voltage - Collector Emitter Breakdown (Max)9V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10mA, 2V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)5.2dB @ 900MHz
Supplier Device Package6-SOT

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