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HFA3134IH96

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HFA3134IH96

RF TRANS 2 NPN 9V 8.5GHZ SOT23-6

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation HFA3134IH96 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a 6-SOT (SOT-23-6), operates with a collector-emitter breakdown voltage of 9V and a maximum collector current of 26mA. It exhibits a DC current gain (hFE) of 48 minimum at 10mA and 2V, and a transition frequency of 8.5GHz. The HFA3134IH96 features a typical noise figure of 2.4dB at 1GHz and can operate at junction temperatures up to 150°C. This device is commonly utilized in wireless communication systems, satellite communications, and radar applications. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain-
Power - Max-
Current - Collector (Ic) (Max)26mA
Voltage - Collector Emitter Breakdown (Max)9V
DC Current Gain (hFE) (Min) @ Ic, Vce48 @ 10mA, 2V
Frequency - Transition8.5GHz
Noise Figure (dB Typ @ f)2.4dB @ 1GHz
Supplier Device Package6-SOT

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