HFA3127R96
RF TRANS 5 NPN 12V 8GHZ 16QFNManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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The Renesas Electronics Corporation HFA3127R96 is a 5 NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates at a transition frequency of 8GHz and features a collector-emitter breakdown voltage of 12V. With a maximum collector current of 65mA and a minimum DC current gain (hFE) of 40 at 10mA and 2V, it provides robust performance in demanding RF circuits. The HFA3127R96 exhibits a typical noise figure of 3.5dB at 1GHz, making it suitable for sensitive receiver front-ends. Its power dissipation capability is rated at 150mW, and it can withstand operating temperatures up to 175°C (TJ). The device is supplied in a 16-QFN (3x3) package, presented on a Tape & Reel (TR). This transistor is commonly utilized in wireless communication infrastructure, radar systems, and test and measurement equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-VFQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 5 NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Supplier Device Package | 16-QFN (3x3) |
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