HFA3127R
RF TRANS 5 NPN 12V 8GHZ 16QFNManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation HFA3127R is a 5 NPN bipolar RF transistor designed for demanding high-frequency applications. This surface mount component operates at up to 8GHz, with a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. It offers a minimum DC current gain (hFE) of 40 at 10mA and 2V, and a typical noise figure of 3.5dB at 1GHz. The device dissipates a maximum of 150mW and can operate at junction temperatures up to 175°C. Packaged in a 16-QFN (3x3) with an exposed pad, the HFA3127R is suitable for use in wireless communications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-VFQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 5 NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Supplier Device Package | 16-QFN (3x3) |
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