HFA3127B
RF TRANS 5 NPN 12V 8GHZ 16SOICManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation HFA3127B is a 5 NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. With a transition frequency of 8GHz and a typical noise figure of 3.5dB at 1GHz, the HFA3127B is suitable for demanding RF circuitry. The device offers a minimum DC current gain (hFE) of 40 at 10mA and 2V. It is packaged in a 16-SOIC (0.154", 3.90mm Width) surface mount case and can operate at temperatures up to 150°C (TJ). The HFA3127B is utilized in various communication and radar systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 5 NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Supplier Device Package | 16-SOIC |
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