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HFA3102B96

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HFA3102B96

RF TRANS 6 NPN 12V 10GHZ 14SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation HFA3102B96 is a 12V, 30mA NPN bipolar RF transistor designed for high-frequency applications. This component features a transition frequency of 10GHz and a maximum power dissipation of 250mW. The HFA3102B96 offers a minimum DC current gain (hFE) of 40 at 10mA and 3V, with typical gain ranging from 12.4dB to 17.5dB. Noise figure is typically 1.8dB to 2.1dB across the 500MHz to 1GHz frequency range. Packaged in a 14-SOIC (0.154", 3.90mm Width) surface mount configuration and supplied on tape and reel (TR), this device is suitable for demanding RF circuitry in wireless communication systems and test equipment. The operating junction temperature is rated up to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case14-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Transistor Type6 NPN
Operating Temperature150°C (TJ)
Gain12.4dB ~ 17.5dB
Power - Max250mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 3V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Supplier Device Package14-SOIC

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