HFA3046B
RF TRANS 5 NPN 12V 8GHZ 14SOICManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation HFA3046B is a silicon bipolar RF transistor featuring five NPN elements in a single 14-SOIC package. Designed for high-frequency applications, this component offers a transition frequency of 8GHz and a maximum collector current of 65mA. With a collector-emitter breakdown voltage of 12V and a power dissipation capability of 150mW, it is suitable for demanding RF designs. The device exhibits a typical small-signal gain of 40 at 10mA collector current and 2V collector-emitter voltage. Its noise figure is rated at a typical 3.5dB at 1GHz. The HFA3046B is surface mountable and operates across a wide temperature range up to 150°C (TJ). This transistor finds application in various industries, including telecommunications and instrumentation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 14-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 5 NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Supplier Device Package | 14-SOIC |
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