2SC5752-T1-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation's 2SC5752-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, housed in a SOT-343 package (SC-82A), operates with a collector current of up to 100mA and a collector-emitter breakdown voltage of 6V. It offers a transition frequency of 12GHz and a typical gain of 13dB. The noise figure is rated at 1.7dB at 2GHz, making it suitable for sensitive RF circuitry. With a maximum power dissipation of 200mW and an operating junction temperature of 150°C, this transistor finds application in wireless communication systems, microwave amplifiers, and other signal processing circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 30mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | SOT-343 |
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