2SC5751-T2-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation presents the 2SC5751-T2-A, an NPN bipolar RF transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 6V and a maximum collector current of 50mA. With a transition frequency of 15GHz and a typical gain of 16dB, it is well-suited for high-frequency signal amplification. The device exhibits a minimum DC current gain (hFE) of 75 at 20mA and 3V, and a low noise figure of 1.7dB at 2GHz. The 2SC5751-T2-A is supplied in a SOT-343F surface mount package, offering a maximum power dissipation of 205mW and an operating junction temperature of 150°C. This transistor is utilized in various communication and signal processing systems.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 16dB |
| Power - Max | 205mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 20mA, 3V |
| Frequency - Transition | 15GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | SOT-343F |
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