2SC5750-T1-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN Bipolar RF Transistor, part number 2SC5750-T1-A. This surface mount device, housed in a SOT-343 package, is designed for high-frequency applications with a transition frequency of 15GHz. It features a collector current capability of 50mA and a collector-emitter breakdown voltage of 6V. The transistor offers a minimum DC current gain (hFE) of 75 at 20mA, 3V, and a typical gain of 15dB. With a noise figure of 1.7dB at 2GHz and a maximum power dissipation of 200mW, it is suitable for demanding RF circuits. The operating junction temperature range extends to 150°C. This component finds application in wireless communication systems and other high-frequency signal processing equipment.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 15dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 20mA, 3V |
| Frequency - Transition | 15GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | SOT-343 |
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