2SC5509-T2-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN bipolar transistor, part number 2SC5509-T2-A. This SOT-343 packaged device is designed for high-frequency applications, featuring a transition frequency of 15GHz and a maximum collector current of 100mA. It offers a typical gain of 14dB and a low noise figure of 1.2dB at 2GHz. The collector-emitter breakdown voltage is rated at 3.3V, with a maximum power dissipation of 190mW. The minimum DC current gain (hFE) is 50 at 10mA and 2V. Operating temperature range extends to 150°C (TJ). This component is utilized in wireless communication systems and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 190mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 2V |
| Frequency - Transition | 15GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz |
| Supplier Device Package | SOT-343 |
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