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2SC5509-T2-A

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2SC5509-T2-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation NPN bipolar transistor, part number 2SC5509-T2-A. This SOT-343 packaged device is designed for high-frequency applications, featuring a transition frequency of 15GHz and a maximum collector current of 100mA. It offers a typical gain of 14dB and a low noise figure of 1.2dB at 2GHz. The collector-emitter breakdown voltage is rated at 3.3V, with a maximum power dissipation of 190mW. The minimum DC current gain (hFE) is 50 at 10mA and 2V. Operating temperature range extends to 150°C (TJ). This component is utilized in wireless communication systems and other RF front-end circuitry.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain14dB
Power - Max190mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)3.3V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 2V
Frequency - Transition15GHz
Noise Figure (dB Typ @ f)1.2dB @ 2GHz
Supplier Device PackageSOT-343

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