2SC5455-T1-A
2SC5455 - MDManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN RF Transistor, part number 2SC5455-T1-A. This bipolar RF transistor is designed for high-frequency applications, featuring a transition frequency of 12GHz and a maximum collector current of 100mA. The 2SC5455 offers a typical gain of 10dB and a noise figure of 1.5dB at 2GHz. With a collector-emitter breakdown voltage of 6V and a maximum power dissipation of 200mW, it is suitable for demanding RF circuits. The device operates at temperatures up to 150°C (TJ) and is provided in a SOT-143 surface mount package, also known as TO-253-4 or TO-253AA. This component finds application in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 30mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | SOT-143 |
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