2SC5013-T1-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation's 2SC5013-T1-A is an NPN bipolar transistor engineered for high-frequency applications. This surface-mount device, housed in an SOT-343 package, offers a collector current of 35mA and a collector-emitter breakdown voltage of 10V. Featuring a transition frequency of 10GHz and a typical noise figure of 1.8dB at 2GHz, it is well-suited for RF amplification and signal processing. The device provides a minimum DC current gain (hFE) of 50 at 10mA and 6V, with a maximum power dissipation of 150mW. Its operating temperature range extends to 150°C (TJ). This component finds application in wireless communication systems, satellite receivers, and other demanding RF front-end designs.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9.5dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-343 |
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