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2SC5013-T1-A

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2SC5013-T1-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

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Renesas Electronics Corporation's 2SC5013-T1-A is an NPN bipolar transistor engineered for high-frequency applications. This surface-mount device, housed in an SOT-343 package, offers a collector current of 35mA and a collector-emitter breakdown voltage of 10V. Featuring a transition frequency of 10GHz and a typical noise figure of 1.8dB at 2GHz, it is well-suited for RF amplification and signal processing. The device provides a minimum DC current gain (hFE) of 50 at 10mA and 6V, with a maximum power dissipation of 150mW. Its operating temperature range extends to 150°C (TJ). This component finds application in wireless communication systems, satellite receivers, and other demanding RF front-end designs.

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9.5dB
Power - Max150mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.8dB @ 2GHz
Supplier Device PackageSOT-343

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