2SC4957-T1-A
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN RF Transistor, Part Number 2SC4957-T1-A. This bipolar RF transistor offers a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It features a transition frequency of 12GHz and a typical gain of 11dB. Designed for surface mount applications, this component is housed in a SOT-143 package. The minimum DC current gain (hFE) is 75 at 10mA and 3V. With a low noise figure of 1.5dB at 2GHz and a maximum power dissipation of 180mW, the 2SC4957-T1-A is suitable for high-frequency applications. This component is commonly utilized in wireless communication systems and other RF circuitry. The operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11dB |
| Power - Max | 180mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | SOT-143 |
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