2SC4227-T1-A
RF TRANSISTOR FOR HIGH FREQUENCYManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN RF Transistor, 2SC4227-T1-A. This SOT-323 packaged bipolar RF transistor offers a 10V collector-emitter breakdown voltage and a maximum collector current of 65mA. Designed for high-frequency applications, it features a transition frequency of 7GHz and a typical gain of 12dB at 1GHz. The device exhibits a minimum DC current gain (hFE) of 40 at 7mA, 3V, and a noise figure of 1.4dB at 1GHz. With a maximum power dissipation of 150mW, it operates at junction temperatures up to 150°C. This component is suitable for use in wireless communications, satellite systems, and other high-speed electronic designs.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SOT-323 |
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