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2SC4227-T1-A

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2SC4227-T1-A

RF TRANSISTOR FOR HIGH FREQUENCY

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation NPN RF Transistor, 2SC4227-T1-A. This SOT-323 packaged bipolar RF transistor offers a 10V collector-emitter breakdown voltage and a maximum collector current of 65mA. Designed for high-frequency applications, it features a transition frequency of 7GHz and a typical gain of 12dB at 1GHz. The device exhibits a minimum DC current gain (hFE) of 40 at 7mA, 3V, and a noise figure of 1.4dB at 1GHz. With a maximum power dissipation of 150mW, it operates at junction temperatures up to 150°C. This component is suitable for use in wireless communications, satellite systems, and other high-speed electronic designs.

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12dB
Power - Max150mW
Current - Collector (Ic) (Max)65mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 7mA, 3V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.4dB @ 1GHz
Supplier Device PackageSOT-323

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