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2SC4095-T1-A

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2SC4095-T1-A

NPN TRANSISTOR

Manufacturer: Renesas Electronics Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Renesas Electronics Corporation NPN Bipolar RF Transistor, part number 2SC4095-T1-A. This SOT-143 packaged transistor features a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It offers a transition frequency of 10GHz and a typical gain of 12dB. The noise figure is rated at 1.8dB at 2GHz. With a maximum power dissipation of 200mW and a minimum DC current gain (hFE) of 50 at 10mA and 6V, this device is suitable for high-frequency applications. Operating temperature range is up to 150°C (TJ). Commonly utilized in wireless communication, RF amplification, and signal processing circuits.

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-253-4, TO-253AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12dB
Power - Max200mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.8dB @ 2GHz
Supplier Device PackageSOT-143

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