2SC4095-T1-A
NPN TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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Renesas Electronics Corporation NPN Bipolar RF Transistor, part number 2SC4095-T1-A. This SOT-143 packaged transistor features a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It offers a transition frequency of 10GHz and a typical gain of 12dB. The noise figure is rated at 1.8dB at 2GHz. With a maximum power dissipation of 200mW and a minimum DC current gain (hFE) of 50 at 10mA and 6V, this device is suitable for high-frequency applications. Operating temperature range is up to 150°C (TJ). Commonly utilized in wireless communication, RF amplification, and signal processing circuits.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-143 |
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