2SC3585-T1B-A
NPN TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
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The Renesas Electronics Corporation NPN transistor, part number 2SC3585-T1B-A, is a surface mount bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA, this component offers a transition frequency of 10GHz. It provides a typical small-signal gain of 9dB and a noise figure of 1.8dB at 2GHz. The device operates up to a junction temperature of 150°C and is supplied in a SOT23-3 (TO-236) package, suitable for bulk packaging. This transistor is commonly utilized in wireless communication systems and other demanding RF circuit designs.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT23-3 (TO-236) |
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