2SC3583-T1B-A
2SC3583 - MDManufacturer: Renesas Electronics Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Renesas Electronics Corporation NPN RF Transistor, part number 2SC3583-T1B-A. This surface mount device operates with a collector current of up to 65mA and a collector-emitter breakdown voltage of 10V. Featuring a transition frequency of 9GHz and a typical gain of 13dB, it exhibits a low noise figure of 1.2dB at 1GHz. The device is housed in a SOT23-3 (TO-236) package, suitable for applications in wireless communication systems and high-frequency electronics. It supports a maximum power dissipation of 200mW and an operating temperature up to 150°C. The minimum DC current gain (hFE) is 50 at 20mA and 8V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT23-3 (TO-236) |
Request a Quote
Clients Also Buy
2SC5998YC-TL-E
SMALL SIGNAL BIPOLAR TRANSTR NPN
HFA3096BZ96
RF TRANS 12/15V 5.5GHZ 16SOIC
HFA3128RZ96
RF TRANS 5 PNP 15V 5.5GHZ 16QFN
