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RM12N650T2

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RM12N650T2

MOSFET N-CH 650V 11.5A TO220-3

Manufacturer: Rectron USA

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 11.5A (Tc) 101W (Tc) Through Hole TO-220-3

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Rds On (Max) @ Id, Vgs360mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)101W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 50 V

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