UJ4SC075018B7S
750V/18MOHM, N-OFF SIC STACK CASManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UJ4SC075018B7S is a high-performance N-Channel SiCFET with a drain-source voltage (Vdss) of 750V. This surface-mount component, packaged in a D2PAK-7 (TO-263-8), offers a low on-resistance of 23mOhm at 50A and 12V Vgs, enabling efficient power conversion. With a continuous drain current (Id) of 72A at 25°C and a maximum power dissipation of 259W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 37.8 nC at 15V and input capacitance (Ciss) of 1414 pF at 400V. The operating junction temperature range is -55°C to 175°C. This component finds utility in high-voltage power supplies, electric vehicle charging infrastructure, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 259W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1414 pF @ 400 V |
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