UJ4SC075011K4S
750V/11MOHM, SIC, STACKED CASCODManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo's UJ4SC075011K4S is an N-Channel SiCFET (Cascode SiCJFET) offering a Drain-Source Voltage (Vdss) of 750 V. This through-hole component, packaged in a TO-247-4, features a low on-resistance of 14.2mOhm at 60A and 12V Vgs, with a continuous drain current (Id) capability of 104A (Tc). The device supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 5.5V at 10mA. Key parameters include a gate charge (Qg) of 75 nC at 15V and input capacitance (Ciss) of 3245 pF at 400V. With a maximum power dissipation of 357W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for high-power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 60A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 400 V |
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