UJ4SC075011B7S
750V/11MOHM, N-OFF SIC STACK CASManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Qorvo N-Channel SiCFET, part number UJ4SC075011B7S, offers a drain-source voltage (Vdss) of 750 V. It features a low on-resistance (Rds On) of 14.2 mOhm at 60A and 12V gate drive, enabling efficient power handling with a continuous drain current (Id) of 104A at 25°C. The device is packaged in a D2PAK-7 (TO-263-8, TO-263CA) surface mount configuration, suitable for high-power applications. With a maximum power dissipation of 357W (Tc) and an operating temperature range of -55°C to 175°C, it is designed for demanding environments. The SiC technology provides superior performance characteristics for applications in electric vehicle charging, industrial motor drives, and power factor correction.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 60A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 400 V |
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