UJ4SC075010L8SSR
750V/10MO,SICFET,G4,TOLLManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Qorvo UJ4SC075010L8SSR is an N-Channel SiCFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 750 V and a continuous Drain Current (Id) of 106 A at 25°C, with a maximum power dissipation of 556 W. The Rds On is specified at a maximum of 14.2 mOhm at 60 A and 12 V. Key parameters include a Gate Charge (Qg) of 75 nC at 15 V and an Input Capacitance (Ciss) of 3245 pF at 400 V. Operating from -55°C to 175°C, this surface mount component utilizes TOLL packaging and is suitable for industries requiring efficient power switching, such as electric vehicles and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 60A, 12V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 400 V |
| Qualification | - |
Request a Quote
Clients Also Buy
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UJ4C075023L8S
750V/23MO,SICFET,G4,TOLL
UF3C065040B3
MOSFET N-CH 650V 41A TO263
