UJ4SC075010L8S
750V/10MO,SICFET,G4,TOLLManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo's UJ4SC075010L8S is an N-Channel SiCFET device featuring a 750 V drain-to-source voltage and a continuous drain current of 106 A at 25°C (Tc). This component offers a maximum on-resistance of 14.2 mOhm at 60 A and 12 V gate drive, with a maximum gate charge of 75 nC at 15 V. The device has a maximum power dissipation of 556 W at 25°C (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Designed for surface mount applications, it is housed in an 8-PowerSFN package, with the supplier device package specified as TOLL. This technology is suitable for applications in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 60A, 12V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 400 V |
| Qualification | - |
Request a Quote
Clients Also Buy
UF3C120080K4S
SICFET N-CH 1200V 33A TO247-4
UJ4C075023L8S
750V/23MO,SICFET,G4,TOLL
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
