UJ4SC075009K4S
750V/9MOHM, SIC, STACKED CASCODEManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo's UJ4SC075009K4S is an N-Channel SiCFET (Cascode SiCJFET) with a drain-source voltage of 750 V. This through-hole component, packaged in a TO-247-4, offers a continuous drain current of 106 A at 25°C and a maximum power dissipation of 375 W at the same temperature. The on-resistance (Rds On) is a maximum of 11.5 mOhm at 70 A and 12 V gate-source voltage. Key parameters include a gate charge of 75 nC at 15 V and input capacitance of 3340 pF at 400 V. The drive voltage is 12V, and the maximum gate-source voltage is ±20V. This device operates within an extended temperature range of -55°C to 175°C. It finds application in high-voltage power conversion systems across industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 70A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3340 pF @ 400 V |
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