UJ4SC075006K4S
750V/6MOHM, SIC, STACKED CASCODEManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UJ4SC075006K4S is a 750V, 7.4mOhm Rds On N-Channel SiC FET, offered in a TO-247-4 package. This stacked cascode device features a continuous drain current of 120A (Tc) and a maximum power dissipation of 714W (Tc) at 25°C. Key electrical characteristics include a Vgs(th) of 6V (Max) at 10mA, a gate charge (Qg) of 164nC (Max) at 15V, and an input capacitance (Ciss) of 8374pF (Max) at 400V. The device operates within a temperature range of -55°C to 175°C (TJ). It is suitable for applications in high-power conversion, electric vehicles, and industrial power systems demanding robust performance and high efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 80A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 714W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8374 pF @ 400 V |
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